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reverse recovery time中文是什么意思

  • 反向恢复时间

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  • 例句与用法
  • Rohms chip japan , high - speed switching , reverse recovery time 2 4ns
    晶片精制,高速切换,逆向回
  • Reverse recovery time
    反向恢复时间
  • However , at turn - off , the diode current reverse for a reverse recovery time trr before falling to zero
    然而在关断时,二极管的电流在降至零之前有一个反向恢复时间。
  • Electronic irradiation , is widely use in manufacture of semiconductor products . in order to reduce reverse recovery time , we determined to adopt it
    电子辐照技术,广泛应用于半导体器件的制造中,本课题用来进一步降低反向恢复时间。
  • A lot of works has been done to reduce the reverse recovery time and improve the general performance in the international power devices ’ research field . they focus on the design of device structure and lifetime controlling technologies
    围绕着如何减下frd的反向恢复时间、提高综合性能,国际功率半导体器件领域进行了广泛的探讨,热点集中在了器件结构设计和寿命控制等技术上,其中又以寿命控制技术为为主要焦点。
  • With the high frequency trend of power electronic technique development , the switching power diodes must be conducted and turn off very fast , that is , the diodes should have short reverse recovery time , low peak reverse current and soft recovery characteristics
    电力电子技术高频化的发展趋势要求功率开关二极管必须具有快速开通和高速关断的能力,即具有短的反向恢复时间( t _ ( rr ) ) ,较小的反向恢复电流( i _ ( rm ) )和软恢复特性。
  • The sample with low emitter efficiency has completed as the method of above . this lead to the greatly decrease of the reverse recovery time and the low reverse leakage and forward voltage , especially the excellent temperature character of the leakage . the test date shows that the samples reach the first class of international level
    本论文作者通过仿真测试,验证了课题研究的理论设想,并设计制作了具有低阳极发射效率结构的高压功率frd ,利用局域铂掺杂和电子辐照相结合的寿命控制方式,实现器件反向恢复时间的极大减小,并且反向漏电流、软度因子、正向压降等关键参数也较理想,且具有极佳的漏电温度特性,达到器件综合性能的优良折衷,达到国际先进水平。
  • The researching results indicate the reverse recovery characteristics of the device are much improved : the reverse recovery time is remarkably shorted , the peak reverse current is notably reduced and the soft factor s is also increased in various degrees but not notable changed in forward drop when introducing the two kinds of novel structure
    结果表明,采用新结构后,反向恢复特性大大改善,恢复时间明显缩短,软度因子s显著提高,反向峰值电流也有不同程度的降低,其综合性能远远高于si同类型结构及常规p ~ + ( sige ) - n ~ - - n ~ +二极管。
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Last modified time:Mon, 18 Aug 2025 00:29:56 GMT

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